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Si550
2
Rev. 0.5
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Supply Voltage1
VDD
3.3 V option
2.97
3.3
3.63
V
2.5 V option
2.25
2.5
2.75
1.8 V option
1.71
1.8
1.89
Supply Current
IDD
Output enabled
LVPECL
CML
LVDS
CMOS
—
120
108
99
90
130
117
108
98
mA
TriState mode
—
60
70
Output Enable (OE)2
VIH
0.75 x VDD
——
V
VIL
——
0.5
Operating Temperature Range3
TA
–40
—
85
C
Notes:
1. Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 7 for further details.
2. OE pin includes a 17 k
pullup resistor to VDD. Pulling OE to ground causes outputs to tristate.
3. If the device is powered up below –20 C and the ambient temperature rises by approximately 105 C during normal
operation, the device will perform a one-time recalibration. The output is squelched for approximately 2–3 ms during
this recalibration.
Table 2. VC Control Voltage Input
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Control Voltage Tuning Slope1,2,3
KV
10 to 90% of VDD
—45
90
135
180
—
ppm/V
Control Voltage Linearity4
LVC
BSL
–5
±1
+5
%
Incremental
–10
±5
+10
Modulation Bandwidth
BW
9.3
10.0
10.7
kHz
VC Input Impedance
ZVC
500
—
k
Nominal Control Voltage
VCNOM
@ fO
—3/8 x VDD
—V
Control Voltage Tuning Range
VC
0VDD
V
Notes:
1. Positive slope; selectable option by part number. See Section 3. "Ordering Information" on page 7.
2. For best jitter and phase noise performance, always choose the smallest KV that meets the application’s minimum APR
requirements. See “AN266: VCXO Tuning Slope (KV), Stability, and Absolute Pull Range (APR)” for more information.
3. KV variation is ±28% of typical values.
4. BSL determined from deviation from best straight line fit with VC ranging from 10 to 90% of VDD. Incremental slope
determined with VC ranging from 10 to 90% of VDD.
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